Features
• Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ±
0.1V
• Double-data-rate architecture; two data transfers
per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK
transition
• Programmable Read latency 3 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential &
interleave)
• Timing Reference: 3-4-4-8
• Edge aligned data output, center aligned data
input
• Auto & Self refresh, 7.8us refresh
interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• High Performance Heat Spreader
• PCB : Height 1.250” (31.75mm), double sided
component
D37PB12C3 – 512MB
For the latest data sheet, please visit the Super Talent Electronics
web site: www.supertalentmemory.com
DDR SDRAM
DIMM
Description
This document describes Super Talent Electronics’
64M x 64-bit (512MB) DDR466 SDRAM
(Synchronous DRAM) CL3 memory module. The
components on this module include sixteen 32M x 8-
bit (8M x 8-bit x 4 Bank) DDR466 SDRAM in TSOP
packages. This 184-pin DIMM uses gold contact
fingers and requires +2.6V....